Toyoda Gosei Succeeds in Making Larger GaN Substrates for Next-Generation Power Devices

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KIYOSU, Japan–(BUSINESS WIRE)–Toyoda Gosei Co.,Ltd. (TOKYO:7282), in collaboration with Osaka University, succeeded in increasing the diameter of substrates for gallium nitride (GaN) power devices1.

Power devices are widely used for power control in industrial machinery, automobiles, home electronics and more. As society moves towards carbon neutrality, the practical application and widespread use of next-generation electrical devices show promise as a way to reduce power losses when controlling large volumes of energy in energy equipment. renewable energy and electric vehicles. GaN power devices are one way to achieve this, and higher quality and larger diameter GaN substrates are needed in the development of these devices to achieve higher productivity (cost reduction).

As part of a project led by the Japanese Ministry of the Environment,2 Toyoda Gosei and Osaka University used a method of growing GaN crystals in liquid metal of sodium and gallium (sodium flux method) to make a high quality GaN substrate (GaN seed crystal) over 6 inches, the largest level in the world. They will then perform quality assessments for mass production of 6-inch substrates, and continue to improve quality and increase diameter size (over 6 inches).

1 Toyoda Gosei leverages its expertise in GaN semiconductors (blue LEDs and UV-C LEDs) to develop next-generation power devices.

2 The technological innovation project to create future societies and lifestyles; this is a large project that includes CO verification2 reductions in the social implementation of applied products based on the development of GaN substrates.

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